Soyadı : SERİN
E-posta :
Tel : 03122033459
Ünvan : PROF.DR.
Kişisel Akademik Bilgiler


Prof. Dr.Tülay Serin                                                                                           

Ankara Üniversitesi Mühendislik Fakültesi, Fizik Müh. Böl. Tandoğan    Tel: 0312 2033459 


Profesör Şubat 2000 Ankara Üniversitesi  Mühendislik Fakültesi Fizik Mühendisliği Bölümü

Doçent Ekim 1993 Ankara Üniversitesi  Mühendislik Fakültesi Fizik Mühendisliği Bölümü

Doktora Ocak1988 Ankara Üniversitesi  Mühendislik Fakültesi Fizik Mühendisliği Bölümü

Yüksek Lisans Şubat 1982 Ankara Üniversitesi  Mühendislik Fakültesi Fizik Mühendisliği Bölümü

Yüksek Müh.  Şubat 1977 Ankara Üniversitesi Fen Fakültesi   Fizik  Bölümü

İş deneyimi

Profesör Şubat 2000 Ankara Üniversitesi  Mühendislik Fakültesi Fizik Mühendisliği Bölümü

Yard. Doç. Dr. Haziran 1988 Ankara Üniversitesi  Mühendislik Fakültesi Fizik Mühendisliği Bölümü

Araştırma Görevlisi Mart 1979 Ankara Üniversitesi Fen Fakültesi   Fizik  Bölümü


1-A.Yıldız, E. Öztürk, A.Atılgan, M.Sbeta, A. Atlı, and T. Serin “   An Understanding of the Band Gap Shrinkage in Sn-Doped ZnO for Dye-Sensitized  Solar Cells “ Journal of  Electronic Materials, 46, 12, 6739-6744 (2017)

2-I. Kara,  A. Atilgan, T. Serin, A. Yıldız “ Effects of Co and Cu dopants on the structural,    optical, and electrical properties of ZnO nanocrystals” J Mater Sci: Mater Electron 28  6088–6092 (2017) 

3- T. Serin, A. Atilgan, I. Kara, and A. Yildiz  “Electron transport in Al-Cu co-doped ZnOthin films” Journal of Applied Physics 121, 095303 (2017)

4-  I. Kara,  A. Yıldız, G. Yıldız, B. Doğan N. Serin, T. Serin,  “Al and X (Sn, Cu, In)  co -doped ZnO nanocrystals”  Journal Of Materials Science-Materials In Electronics  Vol. 27 6  6179-6182 (2016)

5- A.Yıldız, Ş.Uzun,  N. Serin, T. Serin “Influence of grain boundaries on the figure of merit of undoped and Al, In, Sn doped ZnO thin films for photovoltaic applications” Scripta Materialia    113    23-26 (2016)

6- S.Horzum,  E. Torun, T. Serin, F. M. Peeters,” Structural, electronic and optical properties  of Cu-doped ZnO: experimental and theoretical investigation"Philosophical    Magazine 96 17 1743-1756 (2016)

7- S. Gurakar, T. Serin, N.Serin,  Studies on optical properties of antimony doped SnO2 films”  Applied Surface Science  352 16-22 (2015)

8- T. Serin S. Gurakar, H. Ot , A.Yıldız, N.Serin “Influence of oxygen flow rate in CuO"         Applied Surface Science 352 155-157 (2015)

9- A.Yıldız, S. Horzum, N. Serin, T. Serin “Hopping conduction in In-doped CuO thin films” Applied Surface Science 318 105-107 (2014)

10-S. Horzum, A.Yıldız, N. Serin, T. Serin “Carrier transport in In-doped CuO thin films”  Philosophical   Magazine 96 17 1743-1756 (2013)

11- S.Horzum, H. Sahin, S. Cahangirov, P. Cudazzo, A. Rubio, T. Serin,  F.M. Peeters  " Phonon softening and direct to indirect band gap crossover in strained single-layer MoSe2”  Physical Review B 87 12 125415  (2013)

12- A. A. Alsac, A.Yıldız, N. Serin, T. Serin “ Improved conductivity of Sb-doped SnO2  thin  films” Journal Of Applied Physics 113 6 063701 (2013)

13-  A.Yıldız, T. Serin, E. Ozturk, N. Serin “Barrier-controlled electron transport in Sndoped ZnO polycrystalline thin films”Thin Solid Films 522 90-94 (2012)

14- N. Serin, A.Yıldız, E. Cam, S. Uzun, T. Serin, “Fluctuating in the hopping rate of CuO   thin films with respect to substrate temperature” Superlattices And Microstructures  52 4  759-764 (2012 )

15-T. Serin, A.Yıldız, N. Serin “ Electrical Properties of Polycrystalline SnO2 Thin Films “  Applied Physics Express 4  12  121101  (2011 )

16-T. Serin, A.Yıldız, S. Uzun, E. Cam, N. Serin, “Electrical conduction properties of In-doped ZnO thin films”  Physica Scripta 84  6 065703  (2011)

17-S. Sonmezoglu, A. Arslan,  T.Serin, N.Serin,” The effects of film thickness on the optical properties of TiO2-SnO2 compound thin films” Physica Scripta 84  6 065602  (2011)

18- T.Serin, A.Yıldız, S.H. Sahin, N. Serin, “Multiphonon hopping of carriers in CuO thin  Films ” Physica B-Condensed Matter 406 19 3551-3555 (2011)

 19- A.Yıldız, A. A. Alsac, N. Serin, T. Serin  “The change in the electrical transport  mechanism  from the grain boundary conduction to the nearest-neighbor hopping conduction in SnO2” Journal Of Materials Science-Materials In Electronics 22  7  872-875 (2011)

 20- O. Pakma, N. Serin, T. Serin and Ş. Altındal “On the energy distribution profile of interface states obtained by taking into account of series resistance in Al/TiO2/p-Si  (MIS) structures”  Physica B-Condensed Matter 406 4 771-776 (2011)

21- T.Serin, A.Yıldız, S.H. Sahin, N. Serin, “Extraction of important electrical parameters of  CuO” Physica B-Condensed Matter 406 3 575-578 (2011)

 22- N. Serin, A.Yıldız, A. A. Alsac, T. Serin “ Estimation of compensation ratio by  identifying the presence of different hopping conduction mechanisms in SnO2 thin films” Thin Solid Films 519 7 2302-2307 (2011)

23- A.Yıldız, N. Serin, T. Serin ”  Effect of gamma irradiation on the shallow defect states of   hydrogenated amorphous silicon films” European Physical Journal-Applied Physics 53  1 10502  2011


24- T.Serin, A.Yıldız, N. Serin, N. Yıldırım, F. Özyurt, M. Kasap ” Electron-Electron Interactions in Sb-Doped SnO2” Journal Of Electronıc Materials 39 8 1152-1158 (2010)

25- N. Yıldırım, T.Serin, N. Serin, “Investigation of a p-CuO/n-TiO2 thin film heterojunction fabricated by the sol-gel process “ Journal Of Optoelectronıcs And Advanced Materıals 12  5  1153-1156  (2010)

26-A.Yıldız, N.Serin, M.Kasap, T.Serin, D. Mardare,  “The thickness effect on the electrical Conduction mechanism in titanium oxide  thin films” Journal of Alloys and Compounds 493 (2010) 227–232

27-  O. Pakma, N. Serin, and  T. Serin ” The effect of repeated annealing temperature on the structural,  optical, and electrical properties of TiO2 thin films prepared by dip-coating sol-gel method” J. Mater. Sci. 44 401-407 (2009)


28-  O. Pakma, N. Serin, T. Serin and Ş. Altındal ” The effects of prepation temperature on the main electrical parameters of Al/TiO2/p-Si (MIS) structures  by using sol-gel method” J. Sol-Gel Sci. Technol. 50 28-34 (2009)


29-  E. Sağıroğlu Topallı, K. Topallı, S. E. Alper, T. Serin and T. Akın” Pirani vacuum gauges using silicon on glass and dissolved wafer processes for the characterization of MEMS vacuum packaging” IEEE Sensors Journal 9 263-270 (2009) 

30- T. Serin, S. Gurakar,  N. Serin, , et al. “ Current flow mechanism in Cu2O/p-Si heterojunction prepared by chemical method” Journal Of Physıcs D-Applıed Physıcs    42   22            225108   (2009) 

31- Yıldız, A; Serin, N; Serin, T, et al.”The effect of intrinsic defects on the hole transport in Cu2  Optoelectronıcs And Advanced Materıals-Rapıd Communıcatıons    3    10   Pages:   1034-1037   (2009 )

32- Yıldız, A; Serin, N; Serin, T, et al.” Crossover from Nearest-Neighbor Hopping Conduction to   Efros-Shklovskii Variable-Range Hopping Conduction in Hydrogenated Amorphous Silicon  Films”  Japanese Journal Of Applıed Physıcs    48    11    111203   ( 2009)

33- Kus, F O; Serin,T; Serin,N “Current transport mechanisms of n-ZnO/p-CuO heterojunctions” Journal Of Optoelectronıcs And Advanced Materıals    11   I 1 1855-1859 (2009)   

34-  O.Pakma, N. Serin, T. Serin and  Ş. Altındal ”The double Gaussian distribution of barrier heights in Al/TiO2/p-Si(metal-insulator-semiconductor) structures at low temperatures” Journal Of Applied  Physics   104 014501 (2008) 

35-  O. Pakma, N. Serin, T. Serin and Ş. Altındal ” Influence of frequency and bias voltage on dielectric properties and electrical conductivity of  Al/TiO2/p-Si/p+(MOS) structures” J.Phys. D: Appl. Phys. 41   215103 (2008)

36-  O. Pakma, N. Serin, T. Serin and Ş. Altındal ”  The influence of series resistanceand interface states on  intersecting behaviour of I-V characteristics of  Al/TiO2/p-Si (MIS) structures at low temperatures” Semicond. Sci. Technol. 23 105014 (2008)

37-  H. Sari, T. Uzunoglu, R. Capan, N. Serin, T. Serin, C. Tarimci, H. Namli, and O. Turhan,”Investigation of the electrical properties of a novel 1,3-Bis-(p-iminobenzoic acid)indane Langmuir-Blodgett(LB) films containing ZnS nanoparticles”  Journal Of Nanoscıence And Nanotechnology    7    8   2654-2658(2007)

38-T. Serin, N. Serin, S. Karadeniz, H. Sarı, N. Tuğluoğlu, O. Pakma

”Electrical, structural and optical properties of SnO2 thin films prepared by spray pyrolysis” Journal of Non Crystalline. Solids, 352,209-215 (2006)

39-  Ş.Altındal,İ.Dökme,M.M.Bülbül,N.Yalçın,T.Serin,”The role of the interface insulator layer and interface states on the current-transport mechanism of Schottky diodes in wide temperature range” Microelectronic Engineering  83 499-505 (2006)

40-  N. Serin, T. Serin, Ş. Horzum, Y. Çelik ”Annealing effects on the properties of copper oxide thin films prepared by chemical deposition”, Semiconductor Science and Technology, 20, 398 (2005). 

41-  S. Karadeniz, N. Tuğluoğlu, T. Serin, N. Serin, ” The energy distribution of the interface state density of SnO2/p-Si (111) heterojunctions prepared at different substrate temperatures by spray deposition method”, Applied Surface Science, 246, No 1-3, 30 (2005). 

42- T. Serin, N. Serin, B. Schröder “Determination of the distribution of electronic states in hydrogenated amorphous germanium by capacitance techniques” Semicond. Sci. Technol. 19, No 2, 270 (2004). 

43-  Karadeniz S, Tuğluoğlu N, Serin T “Substrate temperature dependence of series resistance in A1/SnO2/p-Si   (111) Schottky diodes prepared by spray deposition method “Applied Surface Science   233 5-13 (2004)

44- N. Serin, T. Serin, ”The photocapacitance property of Cu/Cu2O/Au sandwich structures” Semiconductor Science and Technology, 17, 1162 (2002). 

45- N. Serin, T. Serin, S. Karadeniz “Current-limiting property of Cu/cupric oxide/Cu sandwich structure” Semicond. Sci. Technol. 17, No 1, 60 (2002). 

46- N. Serin, T. Serin, B. Ünal “The effect of humidity on electronic conductivity of an Au/CuO/Cu2O/Cu sandwich structure” Semicond. Sci. Technol. 15, No 2, 112 (2000). 

47- T. Serin, N. Serin, C. Tarimci, B. Unal ” Determination of thermal annealing effect in intrinsic a-Si:H film”, Journal of Non-Crystalline Solids, 276, No 1-3, 30 (2000).

 48- T. Serin, N. Serin, “Effect of reverse-bias annealing on thermal equilibrium changes in hydrogenated amorphous germanium” Semicond. Sci. Technol. 14, No 12, 1048 (1999).

49- T. Serin, “The investigation of the annealing effect on hydrogenated amorphous silicon pin diodes by capacitance techniques” Semicond. Sci. Technol. 13, No 11, 1272 (1998). 

50- T. Serin, “The thermal equilibrium changes on reverse bias annealing in Schottky diodes” Semicond. Sci. Technol. 12, No 11, 1451 (1997). 

51- T. Serin, “The investigation of an annealing effect on the density of states in a-Si:H film” Semicond. Sci. Technol. 12, No 3, 291 (1997). 

52- B. Alkan, T. Serin, B. Unal “Dislocation scattering of electrons in plastically deformed germanium” Semicond. Sci. Technol. 11, No 7, 1046 (1996). 

53- Serin, T. and Serin, N.”Determination of electron diffusion lengthfrom photo characteristics of a p/i/n structure" Applied Physics A 59, 431-433 (1994).

54- Serin, T. and Serin, N. “The effect of annealing on the resistanceof a p/i/n structure” Semiconductor Science and Technology, 9 2097-2100 (1994).

55-  Serin, T. and Serin, N. “The effect of annealing on SnO2/a-SiC:H(p-type)/a-Si:H/a-Si:H(n-type)/Al structure” SemiconductorScience and Technology, 6, 679-683 ( 1991).

56- Serin T, Aydınuraz , A. And Serin, N.”The annealingeffect on the Au/a-Si:H/a-Si:H(n-type)/ Cr Schottky diodes prepared by an r.f. magnetron sputtering technique” Semiconductor Science and Technology,2, 742-746 ( 1987) 

Diğer Yayınlar 

1) S.Gürakar, T.Serin, N. Serin.” Electrical and microstructural properties of (Cu, Al, In)-doped SnO2 films deposited by spray pyrolysis” Adv. Mat. Lett. 2014, 5(6), 309-314 

2) S. Gürakar, T.Serin, N. Serin. “The ınvestıgatıon of undoped and antımony doped tın oxıde thın fılms grown by spray method” Balkan Physıcs Letters 19, 191008, pp. 77-84, (2011) 

Yurtiçi Yayınlar

1- N. Serin, T. Serin, A.R.Özdemir, B. Alkan, Ç. Tarımcı and B. Ünal,  “The determination of thermal annealing effect on a-Si:H films coated on glass and on single crystalline of silicon” Turkish Journal of Physics 26 1 53-59(2002)

2-N. Serin, T. Serin, B. Ünal, “The interaction of the dipole moment of the water molecule with the interface states of the cuprous oxide/cupric oxide junction” Turkish Journal of Physics, 24  2  137-141  (2000).

3- Serin,T.” The determination of thermal annealing effect on the DOS profile of a-Si:H film” Tr. Journal of Physics, 22, 453-459 (1998).

4-  Serin,T. “The annealing effect on the capacitance-voltage characteristics of SnO2/a-SiC:H(p+-type)/a-Si:H/a-Si(n+-type)/Al structure” Tr. J. of Physics 19, 595-600 (1995). 

5- Serin,T. and Serin , N. “The effect of the surface states on the current-voltage characteristics of Au/a-Si:H/a-Si:H(n+-type)/Cr Schottky diodes” Commun Fac.Sci. Univ. Ank. Series A2, A3 43 ,1 –7 (1994). 

6- Serin,T. and Serin , N. “a-SiC:H ve a-Si:H ince filmlerinden hazırlanmış p/i/n diyodunda engel yüksekliğinin tayin”Tr-J of Physics, 15, 608-6. 15, (1991). 

7- Serin,T. and Serin, N. “The determination of minority carrier diffusion coefficient from the C-V characteristics of the Au/Ge/Sn structure” Communication, Series A2, A3, Physics, Engineering Physics and Astronomy, 37, 43-52 (1988).

8- Serin,T. and Serin, N.” Ag/a-Si:H/a-Si:H(n-type)/Cr Schottky diodes prepared by an r.f magnetron sputtering technique” Communication, series A2, A3, Physics ,Engineering Physics and Astronomy 36, 1-9 (1987).